型号:

IRF7603TRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 5.6A MICRO8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF7603TRPBF PDF
产品目录绘图 IR Hexfet Micro-8
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 5.6A
开态Rds(最大)@ Id, Vgs @ 25° C 35 毫欧 @ 3.7A,10V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 27nC @ 10V
输入电容 (Ciss) @ Vds 520pF @ 25V
功率 - 最大 1.8W
安装类型 表面贴装
封装/外壳 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装 Micro8?
包装 剪切带 (CT)
产品目录页面 1523 (CN2011-ZH PDF)
其它名称 IRF7603TRPBFCT
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